A PSPICE model for vanadium oxide microbolometer is presented.On the basis of this model combining with a CMOS readout circuit
a equivalent circuit model of infrared detector is established.The electricity and noise characteristics of the model are analysed.Finally noise equivalent temperature different(NETD) is optimized based on two important design parameters;microbolometer resistance R
D
and MOS channel width W.The optimized data shows that when R
Summary of thermal, shot and flicker noise in detectors and readout circuits [J] . P. Seller. Nuclear Inst. and Methods in Physics Research, A . 1999 (2)