Some novel improvements

such as electroplating the pier on the signal line

remodeling the shape of membrane and designing contact bulges under the bridge are used to reduce the pull-down DC voltage

shorten the switching time and enhance the reliability of RF MEMS switch.The contact bulges under the bridge are achieved by the full etching and partial etching of the polyimide sacrificial layer.The results are obtained through this processing with 28 VDC of decreased pull-down voltage

almost 7×10

5

times of the switch lifetime

0.8 μs of the lowest switching time

0

0

.5 dB of the insertion loss and 35

4

5 dB of the isolation loss under 10 GHz.