CHENG Dong-sheng, SUN Yi-cai, PAN Guo-feng, et al. Research on reducing best operating temperature of TiO2 thin films through doping Mo[J]. 2006, (7): 15-17.
CHENG Dong-sheng, SUN Yi-cai, PAN Guo-feng, et al. Research on reducing best operating temperature of TiO2 thin films through doping Mo[J]. 2006, (7): 15-17. DOI: 10.13873/j.1000-97872006.07.005.
钼掺杂降低TiO2氧敏薄膜最佳工作温度研究
摘要
用直流反应磁控溅射法在陶瓷基片上制备出TiO2薄膜。并进行1 100℃
2 h的退火处理。配置钼酸铵溶液
利用浸渍法处理TiO2薄膜若干时间。取出后
进行500℃
3 h退火处理。用气敏测试箱对制备出的TiO2薄膜的氧敏特性进行试验测试
发现对氧气有很好的敏感特性
比未经此项工艺处理的TiO2薄膜的最佳工作温度降低100℃
为300℃左右
并进行SEM测试
分析其表面结构
研究气敏机理。
Abstract
TiO
2
thin films are preparated on alumina substrates by the method of DC reactive magnetron sputtering.Annealing is carried out at 1 100 ℃ for 2 h.Put them into the ammonium molybdate solution and then annealed at(500 ℃) for 3 h.The thin films have better oxygn-sensing properties.The best operating temperature droped 100 ℃ than undoped TiO
2
thin films
it’s about 300 ℃.The SEM testing is carried out
the surface structure of the thin films is analysed
and the mechanism of the thin films oxygen-sensing properties is investigated.