The differences between morphologies and properties of parylene-C film etched by two atmospheric pressure plasma jets（APPJs） are studied. The two APPJs are generated by single-ring electrode device and double-ring electrode device

separately. The surface etched by single-ring electrode APPJ is nonhomogeneous with three discernable ring patterns from the center to the outside domain

which are composed of（I） a central region

where the Si wafer is seriously damaged;（II） an effective etching region;（III） an etching boundary. The morphology of the parylene-C film etched by double-ring electrode APPJ is much better compared with single-ring electrode APPJ. Especially in region（I）

the Si wafer is slightly damaged. The results of XPS analysis show that the atomic content of O element of the area etched by single-ring electrode APPJ is 11. 53 %

while the atomic content of O element of the area etched by double-ring electrode APPJ is 2. 11 %. It meant the Si wafer and parylene-C film etched by single-ring electrode APPJ are seriously oxidized. In addition

the etching rates of two APPJs are also studied. The single-ring electrode APPJ has higher etching rate but easy to damage the Si wafer

while double-ring electrode APPJ is more stable but requires longer time to achieve the same etch depth.