Aiming at the problem of sensitivity and acquisition bandwidth of CMOS Hall sensor

time limit of CMOS Hall sensor is simulated and analyzed.Firstly

the transient characteristics of CMOS Hall sensor are analyzed by modern physical simulator.Secondly

the three-dimensional model for square Hall sensor is realized by CMOS technology.Finally

the magnetic field effect of silicon device is simulated by current transport model.In order to analyze on response time

the whole circuit is simulated by hybrid mode SPICE

that is

three-dimensional device plus bias scheme.The simulation results show that the response time of the modeled device is very fast and the acquisition bandwidth is within MHz.Settlement time mainly depends on physical structure of the sensor.Higher concentration of N-holes can achieve faster Hall devices

but this will reduce the sensitivity of the sensor.