Anodic bonding is usually adopted in wafer level airtight packaging of silicon on insulator（SOI）pressure sensor.At about 360 ℃

by anodic bonding technology

reliable combination of silicon and borosilicate glass is formed.The thermal expansion coefficient of silicon and borosilicate glass cannot match completely

so the silicon-glass wafer will inevitably has residual stress after cooling. The residual stress directly affects the performance such as stability and reliability of the sensor.A calculating model for the residual stress is established

and the relationship between the residual stress and the thickness of borosilicate glass sheet is analyzed. The bonding experiment is completed

the value of bending stress is obtained by measuring the radius of curvature of the wafer

and the stress matching realization method is verified by adjusting the thickness of the glass sheet.Sample test results show that the residual stress is reduced by stress matching and stability is improved.