Radio frequency micro-electro-mechanical systems（ RF MEMS） switch is usually driven by electrostatic attraction force

which will produce a high electric field within the dielectric layer. The high electric field will cause large number of electrons and holes to be injected and captured by the trap in the dielectric layer. The charge of dielectric will cause adhesion failure of switch. In order to avoid adhesion failure

electrostatic repulsive force is proposed to drive the switch instead of the electrostatic attraction force. Theoretically

there will be no bias potential across the dielectric of the RF MEMS switch driven by electrostatic repulsion force

and charge accumulation will be completely eliminated. Force-producing mechanism of electrostatic repulsion is firstly studied by the COMSOL multiphysics stimulation on a typical structure of electrostatic repulsion. Influence of structure parameters on displacement of movable plate is studied in the structure of electrostatic repulsion. Driving voltage is effectively reduced through structural optimization

which offer a reference for follow-up design of switch.