In the actual design of radio frequency（ RF） power amplifier

the device manufacturers often provide only small-signal scattering（ S）-parameters and static I-V curve of a metal oxide semiconductor field effect transistor（ MOSFET） transistor. Introduce how to design an RF power amplifier with small signal S-parameters. A MOSFET power amplifier operated at 160 MHz is designed with this design method

where a FET transistor from Mitsubishi is selected. The gain of the power amplifier in the working frequency band is larger than 23 d B

and S11 of the input port is prior to-19 d B. The example illustrates that this design method is simple to simulation and easy to implement

which has great value in engineering application.