When a silicon-on-sapphire（ SOS） pressure sensor is used in a wide temperature working range

structure thermal stress will be caused by the material mismatch

since the elastic membrane is composed of titanium alloy and SOS. The thermal process of elastic membrane is analyzed

influence on thermal stability of different structure sensor is compared

to reduce the influence of structure thermal stress

by temperature characteristics of P type doped silicon

and reduce thermal zero point drift is decreased. Through membrane structure selection and design

material selection

process optimization and control

zero point thermal drift of SOS pressure sensor operated at-55

350 ℃ temperature range not more than 0. 015 % FS/℃. Meanwhile

the thermal stability of the sensor is enhanced in a wide t

emperature range.