西南科技大学信息工程学院
纸质出版：2025
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刘杰, 王军. B/N掺杂单栅GFET的自洽模型研究[J]. 传感器与微系统, 2025,(2):57-61+66.
刘杰, 王军. B/N掺杂单栅GFET的自洽模型研究[J]. 传感器与微系统, 2025,(2):57-61+66. DOI： 10.13873/J.1000-9787(2025)02-0057-05.
建立了B/N掺杂单栅石墨烯场效应管(GFET)全工作区域下的漏极电流模型。利用自洽方法获取精确的电势—电荷关系，解决了建模过程中的多重对数问题。该模型明确捕捉到产生非零带隙和狄拉克(Dirac)点偏移对载流子片电荷密度和迁移率等参数的影响。此外，通过考虑相互作用参数和杂质浓度建立了一种半经典扩散迁移率模型。所提出的漏极电流模型和扩散迁移率模型的模拟数据与7.5%B—掺杂单栅GFET的实验数据具有良好的一致性，验证了方法的有效性。在不同掺杂浓度下，B/N掺杂单栅GFET漏极电流模型所预测的转移特性曲线与输出特性曲线表明，通过掺杂能够完全抑制单栅GFET的双极性行为，增强了输出饱和性，并提高了开关比。因此，B/N掺杂单栅GFET能够同时满足模拟/射频电路和数字电路的应用条件。
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