沈阳理工大学理学院
纸质出版:2025
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鲁小鑫, 王萧, 张雪凤, 等. SU-8光栅的制备及其衍射性能研究[J]. 传感器与微系统, 2025,(1):55-58.
鲁小鑫, 王萧, 张雪凤, 等. SU-8光栅的制备及其衍射性能研究[J]. 传感器与微系统, 2025,(1):55-58. DOI: 10.13873/J.1000-9787(2025)01-0055-04.
衍射效率的大小是衡量光刻光栅性能优劣的重要指标。使用严格耦合波分析(RCWA)模拟得到周期10μm和12μm的SU—8微米光栅的各级次衍射效率。采用掩模版紫外光刻技术制作曝光时间分别为27
30
33
36 s的SU—8光栅。通过显微镜观察,发现曝光时间30 s制得的光栅结构更加清晰和平整。测量光栅样品的衍射效率,结果显示,0级衍射效率最大,与理论模拟结果相符。曝光时间27
33
36 s光栅的0级衍射效率较30 s的相对偏高。以周期10μm光栅TE偏振光入射为例,使用RCWA理论模拟了光栅的栅条有缺口以及栅槽有额外薄膜层两种情况,分析了0级衍射效率偏高的现象。
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Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China,Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China,Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China,Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China,Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China,Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China,Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China,Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China,Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China,Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China.Femtosecond-laser direct-writing volume phase gratings inside Ge–As–S chalcogenide glass[J].Ceramics International,2020.
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Leong Eunice Sok Ping,Yew Sok Yee,Kustandi Tanu Suryadi,Liu Yan Jun,Tanoto Hendrix,Wu Qing Yang,Loh Wei Wei,Teo Siew Lang,Teng Jinghua.New approach for multilayered microstructures fabrication based on a water-soluble backing substrate.[J].ACS applied materials & interfaces,2013.
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宋云鹤.分布反馈式染料掺杂液晶激光器的研究[D].沈阳理工大学,2022(02).
朱媛媛.基于严格耦合波分析(RCWA)方法的相位光栅衍射特性研究[D].中央民族大学,2020(01).
巴音贺希格.衍射光栅色散理论与光栅设计、制作和检验方法研究[D].中国科学院研究生院(长春光学精密机械与物理研究所),2004(11).
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