1. 中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室
2. 中国科学院大学
纸质出版:2024
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郑超越, 孙珂, 钟朋, 等. 利用吸合电极实现亚微米电极间隙的可制造性设计[J]. 传感器与微系统, 2024,(1):103-106+110.
郑超越, 孙珂, 钟朋, 等. 利用吸合电极实现亚微米电极间隙的可制造性设计[J]. 传感器与微系统, 2024,(1):103-106+110. DOI: 10.13873/J.1000-9787(2024)01-0103-04.
提出一种利用吸合电极结构的可制造性设计手段,实现亚微米电极间隙的方法。利用静电力拉动可动电极位移实现超出光刻和刻蚀能力的超窄间隙,使得敏感电极间隙由1.3μm减小至300 nm
通过该方法获得的亚微米电极间隙对工艺离散性不敏感,电极间隙的不一致性可以下降1个数量级。结合本文提出的I
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BAR结构的可制造性设计方法,可以实现完整的微机电系统(MEMS)振荡器可制造性设计。
周燕萍,朱帅帅,李茂林,左超,杨秉君.ICP刻蚀工艺在SiC器件上的应用[J].传感器与微系统,2020(11).
崔晓楠.取代石英晶体的MEMS振荡器和全硅振荡器[J].今日电子,2008(12).
Binbin Pei,Ke Sun,Heng Yang,Chaozhan Ye,Peng Zhong,Tingting Yu,Xinxin Li.Oven-Controlled MEMS Oscillator with Integrated Micro-Evaporation Trimming[J].Sensors,2020.
Saad Ilyas,Mohammad I. Younis.Resonator-based M/NEMS logic devices: Review of recent advances[J].Sensors and Actuators: A. Physical,2020.
C. J. Mogab.The Loading Effect in Plasma Etching[J].Journal of The Electrochemical Society,2019.
Weilong You,Lei Zhang,Xiaofei Wang,Wenshan Wei,Weifeng Xia,Heng Yang,Xinxin Li.Fabrication of high aspect ratio self-aligned stepped polysilicon electrode for single-crystal silicon microstructure[J].Microsystem Technologies,2017.
Xinyi Li,Jingfu Bao,Yulin Huang,Yuan Ling,Yingbin Zheng,Yijia Du.A 9.45<ce:hsp sp="0.25"/>MHz micromechanical disk resonator with movable electrodes for gap reduction[J].Sensors & Actuators: A. Physical,2016.
Gavin K. Ho,John Kangchun Perng,Farrokh Ayazi.Micromechanical IBARs: Modeling and Process Compensation[J].Journal of Microelectromechanical Systems: A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems,2010.
Farrokh Ayazi,Khalil Najafi.High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technology[J].Journal of Microelectromechanical Systems: A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems,2000.
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