1. 上海交通大学微纳制造科学与技术国家重点实验室
2. 上海交通大学电子信息与电气工程学院微纳电子学系
纸质出版:2023
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吕振杰, 庞雅文, 杨伸勇, 等. 氧化铂、钛过渡层对铂薄膜温度传感器性能的影响[J]. 传感器与微系统, 2023,(10):9-12+20.
吕振杰, 庞雅文, 杨伸勇, 等. 氧化铂、钛过渡层对铂薄膜温度传感器性能的影响[J]. 传感器与微系统, 2023,(10):9-12+20. DOI: 10.13873/J.1000-9787(2023)10-0009-04.
铂(Pt)薄膜电阻具有体积小、结构简单、电阻温度系数(TCR)高和响应速度快的优点,结合MEMS技术可以实现发动机叶片温度的检测,但纯Pt与衬底之间的结合力较差,易导致薄膜失效。采用磁控溅射分别制备了氧化铂(Pt
x
O
y
)和钛(Ti)过渡层的Pt薄膜电阻,分析了不同过渡层在不同温度(800
900
1 000℃)下退火的微观形貌和电学性能,并分别测试了2种Pt电阻在900℃和1 000℃下的稳定性。结果表明:1 000℃退火的Pt/Pt
x
O
y
薄膜电阻的TCR值最大,达到了3 434×10
-6
/℃
Pt/Pt
x
O
y
薄膜电阻的电学性能优于Pt/Ti薄膜电阻,综合分析,900℃退火的Pt/Pt
x
O
y
薄膜电阻性能最优。
Research status and development trend of MEMS S&A devices: A review[J]. Mei Li;Tengjiang Hu.Defence Technology,2021(02)
空气环境下PtO_2分解实验的研究[J]. 牛亚路;宋凯;孙建平;李旭;叶萌.计量学报,2018(01)
The impact of thermal annealing on the temperature dependent resistance behavior of Pt thin films sputtered on Si and Al 2 O 3 substrates[J]. Xingkai Lin;Congchun Zhang;Shenyong Yang;Wei Guo;Yu Zhang;Zhuoqing Yang;Guifu Ding.Thin Solid Films,2019
Fabrication and microstructure evolution of Al 2 O 3 /ZrBN-SiCN/Al 2 O 3 high-temperature oxidation-resistant composite coating[J]. Xiaohui Zhao;Shuai Yan;Hongmin Wang;Hongchuan Jiang;Wanli Zhang.Ceramics International,2018
Thermal stability of Pt-Ti bilayer films annealing in vacuum and ambient atmosphere[J]. Sizhe Weng;Li Qiao;Peng Wang.Applied Surface Science,2018
Electrical and morphological characterization of platinum thin-films with various adhesion layers for high temperature applications[J]. A. Ababneh;A. N. Al-Omari;A. M. K. Dagamseh;M. Tantawi;C. Pauly;F. Mücklich;D. Feili;H. Seidel.Microsystem Technologies,2017
Design, fabrication and characterization of thin film resistances for heat flux sensing application[J]. Aymen Zribi;Magali Barthès;Sylvie Bégot;François Lanzetta;Jean Yves Rauch;Virginie Moutarlier.Sensors & Actuators: A. Physical,2016
Reliability characterization of a soot particle sensor in terms of stress- and electromigration in thin-film platinum[J]. Radoslav Rusanov;Holger Rank;Tino Fuchs;Roland Mueller-Fiedler;Oliver Kraft.Microsystem Technologies,2016
The influence of deposition parameters on Ti/Pt film growth by confocal sputtering and the temperature dependent resistance behavior using SiO x and Al 2 O 3 substrates[J]. G. Schmidl;J. Dellith;E. Kessler;U. Schinkel.Applied Surface Science,2014
Thermal stability of Pt/Cr and Pt/Cr 2 O 3 thin-film layers on a SiN x /Si substrate for thermal sensor applications[J]. Alexandra Garraud;Philippe Combette;Alain Giani.Thin Solid Films,2013
A robust pressure sensor for harsh environmental applications[J]. S. Fricke;A. Friedberger;H. Seidel;U. Schmid.Sensors & Actuators: A. Physical,2012
Growth of epitaxial oxides on silicon using atomic layer deposition: Crystallization and annealing of TiO2 on SrTiO3-buffered Si(001)[J]. Martin D. McDaniel;Agham Posadas;Thong Q. Ngo;Ajit Dhamdhere;David J. Smith;Alexander A. Demkov;John G. Ekerdt.Journal of Vacuum Science & Technology B,2012
Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition[J]. S. Halder;T. Schneller;R. Waser.Applied Physics A,2007
Investigation of high-temperature degradation of platinum thin films with an in situ resistance measurement apparatus[J]. S. L. Firebaugh;K. F. Jensen;M. A. Schmidt.Journal of Microelectromechanical Systems: A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems,1998(1)
Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration[J]. K. Sreenivas;Ian Reaney;T. Maeder;N. Setter;C. Jagadish;R. G. Elliman.Journal of Applied Physics,1994(1)
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