The adverse effects of radiation on sensing devices used in space communication systems need to be considered.As the core component of mechanical sensing devices

the research on the anti-radiation characteristics of force-sensitive units is particularly important.The InAs quantum dot（QD）embedded in high electron mobility transistor（HEMT）for force-sensitive structure is designed.The output characteristics

and force-sensitivity characteristic of InAs QD-HEMT structure are analyzed by

60

Co-γ ray with varied radiation doses.The experiment results indicate that the electrical properties of InAs QD-HEMT degrades

and the sensitivity is decreased by the in

crease of irradiation dose. The drain current of InAs QD-HEMT reduces about 21 % and the sensitivity decreases about 63.4 % after irradiated with a dose of 150 MRad.The results show that the InAs QD-HEMT structure still has working performance after high dose irradiation

which provides a research basis for MEMS sensors to be used in serious irradiation environment.