In order to extend the bandwidth of low noise amplifier effectively

based on the distributed amplifier principle

an ultra-wideband microwavemonolithic integrated low noise amplifier is proposed using 0. 15 μm Ga As p HEMT process. The amplifier uses 5-level distributed topology

each stage uses cascode structure and adds the decoupling capacitor

increass the amplifier gain

improves the gain flatness and expands the working bandwidth of the amplifier. In the frequency band of 0. 9 ～ 30 GHz

the simulation results show that the gain is 15 ± 1 dB

themaximum noise coefficient is lower than 3. 5 dB

and the minimum noise coefficient is 1. 7 dB

boththe input and output return loss are less than-10 dB

the amplifier operation voltage is 2. 5 V

current consumption is 71. 7 m A

the output power of 1 d B compression point is greater than 10 d Bm

and the chip area is 2. 1 mm × 1. 24 mm.