A high-performance interface amplifying circuit for radio frequency micro-electro-mechanical system（ RF-MEMS） filter is presented. A silicon-based MEMS filter with relative bandwidth of 1. 4 % and center frequency of 73. 02 MHz is fabricated by micro/nano fabrication process. As for high resistance and high insertion loss（ IL） characteristics that

MEMS filter has low-noise

high-gain two-stage amplifier circuit based on operational amplifier and impedance matching circuit are designed. The simulation results indicate that the interface circuit has good amplification effect on HF filter with the gain can achieve 62. 75 d B

noise coefficient of 3. 35 d B and S22 reflection coefficient of-46. 91 d B

which can make the insertion loss（ IL） RF-MEMS filter decrease to 0. 56 d B.Testing output signal of MEMS filter cascaded with the PCB board relative circuit indicates that the IL of the RFMEMS filter is reduced to 16. 2 d B

the relative bandwidth is 1. 4 %

and the center frequency is 73. 02 MHz

improving the application potential of MEMS filters in wireless communications.