HU Huiwen, WEI Rongshan. Design of capacitive sensor based on Sigma-Delta modulation[J]. 2019, (6): 109-111+114. DOI: 10.13873/J.1000-9787(2019)06-0109-03.
基于Sigma-Delta调制的电容传感器设计
摘要
提出一种基于Sigma-Delta调制的电容传感器芯片
采用三阶Sigma-Delta调制技术实现了电容到数字信号的直接转换
并通过补偿电容器矩阵扩展可测电容值范围
利用电流饥饿型OTA提高运放电流利用率
降低整体功耗。采用SMIC 0. 18μm CMOS工艺
利用Cadence工具对电路进行仿真验证
在2 V的供电电压下
共消耗电流18. 6μA
0. 8 ms转换时间内
调制器实现三阶噪声整形功能
可测输入电容范围为0~8 pF
并实现良好的线性度。
Abstract
A kind of capacitive sensor chip which using three-order Sigma-Delta modulation technique to realize direct conversion of capacitance to digital signal is introduced. It extends measurable capacitance range by compensation capacitor matrix
and take advantage of current-starved OTA to improve operational amplifier( OPAMP) current efficiency
as well as reduce the overall power consumption. This capacitance sensor is realized in SMIC 0. 18 μm CMOS technology and Cadence tool is used for simulation validation of circuit. Measurement results show that the modulation performs three-order noise shaping function in transfer time of 0. 8 ms
while consuming 18. 6 μA under 2 V supply voltage. The measurable input capacitance range is 0 ~ 8 p F