1. 大连理工大学机械工程学院
2. 大连理工大学辽宁省微纳米技术及系统重点实验室
纸质出版:2015
移动端阅览
[1]陈莉,尹鹏和.MEMS制造中精确测量薄膜厚度的方法研究与比较[J].传感器与微系统,2015,34(10):15-17+21.
CHEN Li, YIN Peng-he. Study and comparision of accurate measurement methods for film thickness in MEMS fabrication[J]. 2015, 34(10): 15-17+21.
[1]陈莉,尹鹏和.MEMS制造中精确测量薄膜厚度的方法研究与比较[J].传感器与微系统,2015,34(10):15-17+21. DOI: 10.13873/J.1000-9787(2015)10-0015-03.
CHEN Li, YIN Peng-he. Study and comparision of accurate measurement methods for film thickness in MEMS fabrication[J]. 2015, 34(10): 15-17+21. DOI: 10.13873/J.1000-9787(2015)10-0015-03.
精确测量各种功能薄膜的厚度在微机电系统(MEMS)制造加工过程中有非常重要的意义。利用接触式表面轮廓仪、光谱椭偏仪、电感测微仪、扫描电镜、原子力显微镜和工具显微镜分别测量了10 nm
1
00μm各种薄膜的厚度。比较了不同测量仪器的测量范围、分辨率和对样品的适用性
分析了薄膜厚度测量过程中误差产生的机理。实验结果表明:当存在膜层台阶时
10 nm
1
00μm的膜厚测量均可采用接触式表面轮廓仪
对于硬度较高的膜层可采用电感测微仪
对于厚度小于0.5μm的膜层可采用原子力显微镜;对于可观察样品侧面、厚度大于0.7μm的膜层可采用扫描电镜
工具显微镜适用于μm级膜层
对于厚度大于20μm的膜层不宜采用光谱椭偏仪。
It is very important to accurately measure thicknesses of various functional films during micro-electromechanical systems( MEMS) manufacturing process. Various sample films with thickness of 10 nm
100 μm are measured by contact surface profilometer
spectroscopic ellipsometer
inductance micrometer
scanning electron microscope( SEM)
atomic force microscopy( AFM) and toolroom microscope. The measurement range
resolution and applicability of different measurement equipments are compared
error generation mechanism during thickness measurement is analyzed. Experimental results show that when there is a mesa layer on the substrate
contact surface pr
ofilometer can be used for thickness measuring at range of 10 nm
100 μm; inductance micrometer is suitable for harder layer; AFM can be used for measuring thickness less than 0. 5 μm; SEM is suitable for sample with homogeneous profile and with thickness more than 0. 7 μm; toolroom microscope can be used for micro-scale layer; spectroscopic ellipsometer is not suitable for measuring the thickness more than 20 μm.
基于介观压光效应的MEMS陀螺研究 [J]. 朱京,温廷敦,许丽萍,陈磊. 传感器与微系统 . 2015(03)
MEMS扫描镜温度可靠性测试 [J]. 乔大勇,史龙飞,曹兰玉,练彬. 传感器与微系统 . 2014(12)
硅MEMS器件加工技术及展望 [J]. 徐永青,杨拥军. 微纳电子技术 . 2010(07)
测量薄膜表面粗糙度方法的研究 [J]. 李刚,王瑞斌,李慧琴. 实验室研究与探索 . 2006(11)
A phase-stepped spectroscopic ellipsometer [J] . Lionel R. Watkins. Optics and Lasers in Engineering . 2014
A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches [J] . M. Koutsoureli,L. Michalas,A. Gantis,G. Papaioannou. Microelectronics Reliability . 2014
Recent developments in MEMS sensors: a review of applications, markets and technologies [J] . Robert Bogue. Sensor Review . 2013 (4)
Structural, compositional and optical properties of PECVD silicon nitride layers [J] . Fouad Karouta,Kaushal Vora,Jie Tian,Chennupati Jagadish. Journal of Physics D: Applied Physics . 2012 (44)
Numerical ellipsometry: Ellipsometer analysis in the n – k plane for select combinations of metals, semiconductors, and insulators [J] . F.K. Urban,D. Barton. Thin Solid Films . 2008 (3)
Length-scale-controlled fatigue mechanisms in thin copper films [J] . G.P. Zhang,C.A. Volkert,R. Schwaiger,P. Wellner,E. Arzt,O. Kraft. Acta Materialia . 2006 (11)
Size effects in the fatigue behavior of thin Ag films [J] . R Schwaiger,O Kraft. Acta Materialia . 2002 (1)
Fabrication of photoplastic high-aspect ratio microparts and micromolds using SU-8 UV resist [J] . H. Lorenz,M. Despont,P. Vettiger,P. Renaud. Microsystem Technologies . 1998 (3)
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