SiC is a new type semiconductor material

because of its stable chemical properties

any acid or alkali which can corrode it at room temperature have not be found

so dry etching is often used in SiC machining.GSE200 plus etching machine is used to etch SiC

influence of etching gas

source power RF1

radiofrequency power RF2 and chamber pressure on etching result are studied

relative analysis of generated results is carried out.A SiC ICP deep etching method is proposed

which has an important guiding significance on SiC deep etching technique.