Metal-semiconductor-metal(MSM)ultraviolet detectors are widely used in ultraviolet sterilization

optical fiber communication

missile tracking

aerospace and other fields.According to the traditional MSM ultraviolet detector

a 3D-MSM device based on aluminum nitride(AlN)is designed

and then

different metal electrode materials

Al-Al

Ni-Ni

Ni-Al MSM devices and 3D-MSM devices are designed.The influence of performance parameters such as photocurrent

dark current

responsivity

time photoelectric response and external quantum efficiency on the performance of AlN-based traditional MSM device is analyzed by APSYS simulation software.The simulation results indicate that the 3D structure of the 3D-MSM device optimizes the electric field distribution within the device and effectively enhances the electric field intensity between the two electrodes.This improvement is beneficial to reducing the internal electric field caused by different contact barrier heights of the Ni-Al electrode material in the 3D-MSM device.At the same time

the etching defects introduced during the etching process contribute to the formation of an alloy at the metal-AlN contact interface

which further reduces the contact barrier.Therefore

the 3D-MSM device can help to reduce performance difference of devices caused by different electrode materials.