In order to meet the demand for high dynamic response

high precision and high resolution temperature sensor in high-speed railway traction system

the performance of MEMS platinum(Pt)film temperature sensor is improved by optimizing the chip structure.Although traditional sensors perform well in terms of measurement range and stability

there is room for improvement in response speed

resolution and precision and there is a shortage of research especially in the optimization of thin film and substrate size.Therefore

a new type of high-dynamic

thin-film temperature sensor is developed

which adopts the structure of insulator-silicon nitride(Si

3

N

4

)

resistor-platinum and substrate-alumina(Al

2

O

3

).Through threedimensional modeling and COMSOL finite element simulation

the influence of substrate material

thin-film and substrate thickness parameters on the performance of the sensor is deeply analyzed

and finally the optimal structural parameters are determined.The simulation results show that the novel sensor has a significant improvement in response speed and temperature measurement precision.The response time is 50ms

the precision is better than 0.02K

and the resolution reaches 0.001K.In addition

the development of this high-dynamic thin-film temperature sensor is not only of great significance for the temperature monitoring of high-speed railway traction systems

but also provides a basis for potential application in other high-demand applications.