Schottky barrier diode(SBD)based on ultrathin β-Ga

2

O

3

film is prepared by depositing gallium oxide(Ga

2

O

3

)film with different thicknesses on silicon oxide(SiO

2

)substrates using atomic layer deposition(ALD)method

and the effects of electrode spacing(

d

)

film thickness(

H

)

thin film annealing temperature(

T

film

)

and ohmic annealing temperature(

T

E

)on the forward and reverse characteristics of the devices are studied.The results show that the forward current of the device decreases and the withstand voltage value increases as

d

increases from 10μm to 35μm;the forward current and the withstand voltage value increases as

H

increases from 60nm to 180nm;the forward current and the withstand voltage value increase as

T

film

increases from 500℃ to 900℃

the forward current and the withstand voltage value initially increase and then decrease as

T

E

increases from 250℃ to 650℃

and the forward current and the withstand voltage value.The results show that the SBD has optimal forward characteristics while

d

is 10μm

H

is 180 nm

T

film

is 900℃ and

T

E

is 550℃

and the maximum value of forward current is 1.46×10

-7

A.The reverse characteristics are the optimal

while

d

is 35μm

H

is 180nm

T

film

is 900℃ and

T

E

is 550℃

and the maximum withstand voltage is 297.004V.