XU Dong, SONG Chengjun, LI Tao, et al. Research progress of wide-bandgap oxide semiconductor ultraviolet photodetectors[J]. 2025, 44(10): 1-6+16.DOI:
宽禁带氧化物半导体紫外光电探测器研究进展
摘要
紫外光电探测器在环境监测、生物医学成像、先进光通信系统及紫外辐射测量等方面有着广泛的 应用
具有重要的研究价值。宽带隙氧化物半导体材料因其对紫外波段光本征敏感的独特探测优势
这使 其成为紫外光电探测领域研究的热点。本文对近年来国内外各研究小组以宽禁带氧化物半导体(ZnO
WO
3
TiO
2
Ga
2
O
3
)材料为研究对象
通过应用新工艺、新材料、新结构
在紫外光电探测领域取得的研究成 果进行了综述
为未来新型紫外光敏感材料的开发和高性能紫外光电探测器的研制提供参考。
Abstract
Ultraviolet photodetectors
with a broad range of applications in fields such as environmental monitoring
biomedical imaging
advanced optical communication systems
and ultraviolet radiation measurement
present substantial research value. Wide-bandgap oxide semiconductor materials
intrinsically sensitive to the ultraviolet band
have become a focal point in ultraviolet photodetection research due to their unique detection advantages.This paper reviews the research achievements in the field of ultraviolet photodetection obtained by domestic and foreign research groups in recent years
which focus on wide-bandgap oxide semiconductor materials (ZnO
WO
3
TiO
2
Ga
2
O
3
) and adopt new processes
new materials
and new structures.These achievements provide a reference for future development of new ultraviolet-sensitive materials and the fabrication of high-performance ultraviolet photodetectors.